GaN（窒化ガリウム）は、従来のシリコンMOSFETを大きく上回る高速、高効率、高電力密度を実現する革新的な新材料です。STの先進的なMasterGaNシステム･イン･パッケージ（SiP）は、GaNトランジスタおよびゲート･ドライバを1パッケージに集積し、ゲート･ドライバのレイアウト最適化による高効率化や、電力密度の向上、および寄生効果の最小化による高いスイッチング周波数を実現します。
GaNドライバは、エンハンスメント型GaN FETまたはNチャネル･パワーMOSFET向けのハーフブリッジ･ゲート･ドライバです。
高電圧電源コンバータは、GaN HEMTテクノロジーの導入により拡充されています。GaNトランジスタを使用すると、結果としてPCBの小型化、軽量につながるため、高電力密度、高効率、高スイッチング周波数が実現され、スイッチング電源の設計が簡素化されて、全体的な性能が向上します。
注目ビデオ
MasterGaN, ST's world first solution to integrate Si driver and 2 GaN power transistors in 1 package
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Power Management Design Center
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Power Management Design Center
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