SCT012HU90G3AG

生産終了

Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HU3PAK package

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製品概要

概要

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

  • 特徴

    • AEC-Q101 qualified
    • Very low RDS(on) over the entire temperature range
    • High speed switching performances
    • Very fast and robust intrinsic body diode
    • Source sensing pin for increased efficiency