製品概要
概要
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
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特徴
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
推奨コンテンツ
Events and Seminars
すべてのリソース
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製品スペック (1)
タイトル | バージョン | 更新日 | ||
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1.0 | 09 Jan 2025 | 09 Jan 2025 |
アプリケーションノート (4)
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1.0 | 05 Mar 2025 | 05 Mar 2025 | ||
1.1 | 13 Dec 2022 | 13 Dec 2022 | ||
1.0 | 15 Jul 2019 | 15 Jul 2019 | ||
1.4 | 13 Sep 2018 | 13 Sep 2018 |
テクニカル・ノート & 技術解説 (4)
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2.2 | 06 Jul 2021 | 06 Jul 2021 | ||
2.0 | 01 Apr 2025 | 01 Apr 2025 | ||
2.4 | 11 Jul 2023 | 11 Jul 2023 | ||
2.0 | 23 Nov 2023 | 23 Nov 2023 |
ユーザマニュアル (1)
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1.3 | 21 Oct 2016 | 21 Oct 2016 |
フライヤー (5 of 9)
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1.0 | 18 Jun 2021 | 18 Jun 2021 | ||
1.0 | 27 Feb 2022 | 27 Feb 2022 | ||
1.0 | 19 Apr 2024 | 19 Apr 2024 | ||
1.0 | 26 Nov 2024 | 26 Nov 2024 | ||
1.0 | 06 Feb 2025 | 06 Feb 2025 | ||
1.0 | 24 Dec 2021 | 24 Dec 2021 | ||
1.0 | 21 Jun 2021 | 21 Jun 2021 | ||
1.1 | 21 Jun 2021 | 21 Jun 2021 | ||
3.0 | 26 Oct 2023 | 26 Oct 2023 |
カンファレンスペーパー (5 of 8)
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1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
1.0 | 29 Apr 2021 | 29 Apr 2021 | ||
1.0 | 01 Aug 2015 | 01 Aug 2015 | ||
1.0 | 25 Jul 2018 | 25 Jul 2018 | ||
1.0 | 25 Jul 2018 | 25 Jul 2018 | ||
1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
1.0 | 23 Aug 2021 | 23 Aug 2021 |
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - SCT012HU90G3AG
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SPICE models (1)
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ZIP | 1.0 | 19 Aug 2022 | 19 Aug 2022 |
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