意法半导体推出STGAP系列隔离式MOSFET和IGBT栅极驱动器,可在连接到系统控制端的输入部分与被驱动的MOSFET或IGBT之间提供电气隔离。通过高压片上的微变压器实现电气隔离,确保控制指令和诊断信息在电路的悬空端与参考接地端之间可靠传输。
STGAP电气隔离式栅极驱动器具有极高灵活性,提供大量可调参数,可完美匹配所选MOSFET或IGBT,满足系统需求。该系列产品还配备丰富的诊断功能,有效提升系统稳健性和可靠性。配套提供评估硬件、软件和技术文档,助力客户加速产品上市进程。
意法半导体推出STGAP系列隔离式MOSFET和IGBT栅极驱动器,可在连接到系统控制端的输入部分与被驱动的MOSFET或IGBT之间提供电气隔离。通过高压片上的微变压器实现电气隔离,确保控制指令和诊断信息在电路的悬空端与参考接地端之间可靠传输。
STGAP电气隔离式栅极驱动器具有极高灵活性,提供大量可调参数,可完美匹配所选MOSFET或IGBT,满足系统需求。该系列产品还配备丰富的诊断功能,有效提升系统稳健性和可靠性。配套提供评估硬件、软件和技术文档,助力客户加速产品上市进程。
Galvanically isolated gate driver for SiC MOSFETs with 10 A Source/Sink current, desaturation protection and adjustable SOFTOFF.
Galvanically isolated gate driver for SiC MOSFETs with 6 A Source/Sink current, desaturation protection and adjustable SOFTOFF.
Galvanically isolated gate driver for IGBTs with 10 A Source/Sink current, desaturation protection and adjustable SOFTOFF.
Galvanically isolated gate driver for IGBTs with 6 A Source/Sink current, desaturation protection and adjustable SOFTOFF.
The STGAP4S is a galvanically isolated single gate driver for IGBTs and SiC MOSFETs with advanced protection, configuration and diagnostic features. The architecture of the STGAP4S isolates the channel gate driving from the control and the low voltage interface circuitry through true galvanic isolation.
The STGAP3S gate driver for SIC MOSFETs and IGBT devices combines ST’s latest galvanic isolation technology with optimized desaturation protection and flexible Miller-clamp architecture.
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