STG50M170F3D7

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采用D7封装的1700 V、50 A沟槽栅场截止低损耗M系列IGBT晶片

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概述

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描述

该器件是一款采用先进专有沟槽栅极场截止结构设计的IGBT。该器件是M系列IGBT的一部分，代表了逆变器系统性能与效率之间的理想平衡，其中低损耗和短路功能至关重要。此外，正VCE(sat) 温度系数特性和紧密的参数分布，使得并联操作更为安全。

  • 所有功能

    • 低VCE(sat) = 2 V（典型值）@ IC = 50 A
    • 短路耐受时间为10 μs
    • 最小尾电流
    • 参数分布紧密
    • 正VCE(sat) 温度系数
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The current status of a product:
Active: Product is in volume production
Evaluation: Product is under characterization. Limited Engineering samples available
Preview: Product is in design stage
Target: Product is in design feasibility stage.No commitment taken to produce
Proposal: Marketing proposal for customer feedback.No commitment taken to design or produce
NRND: Not Recommended for New Design.Product is in volume production only to support customers ongoing production.Compliancy of the device with industry requirement domains (IRD)The current status of a product:
Active: Product is in volume production
Evaluation: Product is under characterization. Limited Engineering samples available
Preview: Product is in design stage
Target: Product is in design feasibility stage.No commitment taken to produce
Proposal: Marketing proposal for customer feedback.No commitment taken to design or produce
NRND: Not Recommended for New Design.Product is in volume production only to support customers ongoing production.Budgetary PriceMarketing description of the package type.Storage method used to contain product.Main country of assembly or fabrication of the product.ECCNs are five character alpha-numeric designations used on the Commerce Control List to identify dual-use items for export control purposes. ECCNs are five character alpha-numeric designations used on the Commerce Control List to identify dual-use items for export control purposes.The value as specified by level (minTypMax) of the ambient temperature (in Cel) in which this item was designed to operate.The value as specified by level (minTypMax) of the ambient temperature (in Cel) in which this item was designed to operate.