In addition to ensuring compliance with today's most stringent energy efficiency regulations (Energy Star, 80Plus, and European Efficiency), ST's silicon-carbide diodes show four times better dynamic characteristics with 15% less forward voltage (VF) than standard silicon diodes.
Silicon-carbide diodes belong to our STPOWER family.
The efficiency and robustness of solar inverters, motor drives, uninterruptible power supplies and circuits in electrical vehicles are therefore greatly improved by the use of silicon-carbide (SiC) diodes.
ST proposes a 600 to 1200 V range with single and dual diodes encapsulated in package sizes from PowerFLATTM 8x8 to TO-247, including the ceramic insulated TO-220. SiC diodes in 10, 15 and 20A versions are newly encapsulated in the D2PAK which features wider creepage distance for higher electric and pollution standards.
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High efficiency 3-phase PFC with SiC devices & digital control
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SiC diodes – compact surface-mount PowerFLAT™ 8x8 HV packages
To help engineers design denser, more efficient power conversion stages, ST's compact surface-mount PowerFLAT™ 8x8 HV devices feature excellent thermal performance. Moreover, ST took a few extra steps to propose a 4 to 10 A range (STPSC4H065DLF, STPSC6H065DLF, STPSC8H065DLF, STPSC10H065DLF and STPSC10065DLF) with super-power density.
- Package less than 1 mm thick
- Forward voltage (VF) improved by 200 mV
- High-voltage creepage: 2.75 mm
- Designed and built for high inrush current (IFSM)
- Rth thermal resistance as low as 1.7°C/W
