The 600 V STMESH trench T high voltage MOSFET series is the latest ST innovative technology for high-voltage MOSFETs. The trench T series represents the first 12” superjunction MOSFET produced by etching and filling the epitaxial layer using deep trench technology. It enables designers to increase power density in more compact system solutions featuring low on-resistance and gate charge. The T series is optimized for very good switching performance to minimize switching loss, as well as provide robust avalanche capability. The series sets new efficiency benchmarks in hard switching topologies, like those employed in PFC power stages.
The trench T series offers a lower maximum drain-source on-resistance compared to the previous MDmesh M6 series technology, categorized by package type.
Applications
Discover our portfolio
Benefits
- Balanced cost & performance for a broad range of power applications
- Lowering process complexity vs multidrain technology
- More capacity and shorter cycle time
注目ビデオ
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.
