- SCTW100N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCT027TO65G3 Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package
- SCT20N120H Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an H2PAK-2 package
- SCTH100N120G2-AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- SCT040W120G3 Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCTHCT250N12G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCT015W120G3-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCTW40N120G2VAG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package
- SCTH40N120G2V-7 Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package
- SCT018W65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247 package
- SCT018H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT060W75G3-4AG Automotive-grade silicon carbide Power MOSFET 750 V, 60 mOhm typ., 30 A in an HiP247-4 package
- SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTH60N120G2-7 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
- SCT016H120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT040W120G3-4 Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package
- SCT040H120G3-7 Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCTHS250N120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK package
- SCTWA90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
- SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
- SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package
- SCTH60N120G2-7AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 55 A in an H2PAK-7 package
- SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
- SCTW60N120G2 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
- SCTWA40N12G24AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA60N120G2-4 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
- SCTWA60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package
- SCT070W120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247 package
- SCT070W120G3-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070HU120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070H120G3AG 1200V、63mΩ（Typ.）、30Aの車載用SiCパワーMOSFETをH2PAK-7パッケージで提供
- SCT025H120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025W120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT040W120G3-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCTWA70N120G2V Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTH40N120G2V7AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H2PAK-7 package
- SCT1000N170 Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT012H90G3AG Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT1000N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT040H120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT20N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package
- SCT012W90G3AG Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
- SCT055TO65G3 Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT025W120G3-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4 Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT019HU120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an HU3PAK package
- SCT027W65G3-4AG Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an HiP247-4 package
- SCTHS250N65G3 Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mOhm typ., 237 A in a STPAK package
- SCT014HU65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in an HU3PAK package
- SCTW35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
- SCTWA20N120 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
- SCTHS250N65G2G Automotive-grade silicon carbide Power MOSFET 650 V, 8 mOhm typ., 250 A in a STPAK package
- SCT040W65G3-4 Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCTW70N120G2V Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTWA40N120G2V-4 Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package
- SCT055H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
- SCT040W65G3-4AG Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCTL90N65G2V Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
- SCTWA70N120G2V-4 Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCT027H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCTWA40N120G2V Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCT055W65G3-4AG Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package
- SH70M12W3AG Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MOSFET
- SCTWA90N65G2V-4 Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCT055HU65G3AG 650V、58mΩ（Typ.）、30Aの車載用SiCパワーMOSFETをHU3PAKパッケージで提供
- SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCT040HU120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT10N120 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCT055H65G3-7 Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
- SCT30N120H Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
- SCTW40N120G2V Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTHC250N120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCT20N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTWA30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- SCT10N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCT027HU65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an HU3PAK package
- SCT011HU75G3AG Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011H75G3AG 750V、11.4mΩ（Typ.）、110Aの車載用SiCパワーMOSFETをH2PAK-7パッケージで提供
- SCT020W120G3-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT018W65G3-4AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT020HU120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCTHS300N75G3AG Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mOhm typ., 300 A in a STPAK package
- SCT020H120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an H2PAK-7 package
- SCT060W75G3AG Automotive-grade silicon carbide Power MOSFET 750 V, 60 mOhm typ., 30 A in an HiP247 package
- SCT040TO65G3 Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCTHS200N120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mOhm typ., 170 A in a STPAK package
- SCTW90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTH90N65G2V-7 Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
- SCTH70N120G2V-7 Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package
- SCT070W120G3-4 Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT060HU75G3AG Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package
- SCT040W120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCTW100N65G2AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
- SCTH35N65G2V-7 Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package
- SCTWA35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package
- SCTH35N65G2V-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT040HU65G3AG 650V、40mΩ（Typ.）、30Aの車載用SiCパワーMOSFETをHU3PAKパッケージで提供
- SCT018H65G3-7 Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT040H65G3SAG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 straight leads package
- SCT040H65G3-7 Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3-7 Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT040H65G3AG 650V、40mΩ（Typ.）、30Aの車載用SiCパワーMOSFETをH²PAK-7パッケージで提供
- SCT20N120 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTL35N65G2V PowerFLAT 8 x 8 HVパッケージで提供される650V、55mΩ（Typ.）、40AのSiCパワーMOSFET
- SCTWA35N65G2V-4 Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
STPOWER SiC MOSFET: 製品
STの製品のみを表示
Please enter your desired search query and search again フィルタ
Quick filters
STの製品のみを表示
All resource types 詳細を非表示
All resource types
フィルタ
Quick filters
ファイル･タイプ
更新日
